Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MJE5850 | PNP silicon power transistor | Motorola | - | 4 | -65°C | 150°C | 302 K |
MJE5850 | SWITCHMODE Series PNP Silicon Power Transistors | ON-Semiconductor | - | 3 | - | - | 302 K |
MJE5851 | PNP silicon power transistor | Motorola | - | 4 | -65°C | 150°C | 302 K |
MJE5851 | SWITCHMODE Series PNP Silicon Power Transistors | ON-Semiconductor | - | 3 | - | - | 302 K |
MJE5852 | PNP silicon power transistor | Motorola | - | 4 | -65°C | 150°C | 302 K |
MJE5852 | PNP silicon power transistor | Motorola | - | 4 | -65°C | 150°C | 302 K |
MJE5852 | SWITCHMODE Series PNP Silicon Power Transistors | ON-Semiconductor | - | 3 | - | - | 302 K |
MJE5852 | HIGH VOLTAGE PNP POWER TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 71 K |
NTE585 | Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 1.0A. | distributor | - | 2 | -65°C | 125°C | 15 K |
NTE5850 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
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