Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4E641612B-TC45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612B-TC50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612B-TC60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612B-TL45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612B-TL50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612C-TL45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 884 K |
NTE6417 | Bidirectional thyristor diode (SIDAC). Peak off voltage 90V. | distributor | - | 2 | 0°C | 125°C | 17 K |
NTE6418 | Bidirectional thyristor diode (SIDAC). Peak off voltage 90V. | distributor | - | 2 | 0°C | 125°C | 17 K |
NTE6419 | Bidirectional thyristor diode (SIDAC). Peak off voltage 90V. | distributor | - | 2 | 0°C | 125°C | 17 K |
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