| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EBS25EC8APFA-75 | 256M; 133MHz unbuffered SDRAM DIMM | distributor | DIMM | 168 | 0°C | 70°C | 160 K |
| EBS25EC8APFA-7A | 256M; 133MHz unbuffered SDRAM DIMM | distributor | DIMM | 168 | 0°C | 70°C | 160 K |
| EBS25EC8APSA-75 | 256M; 133MHz SDRAM SO-DIMM | distributor | DIMM | 144 | 0°C | 70°C | 166 K |
| EBS25EC8APSA-7A | 256M; 133MHz SDRAM SO-DIMM | distributor | DIMM | 144 | 0°C | 70°C | 166 K |
| EBS25EC8APSA-80 | 256M; 100MHz SDRAM SO-DIMM | distributor | DIMM | 144 | 0°C | 70°C | 166 K |
| EBS52EC8APFA-75 | 512M; 133MHz unbuffered SDRAM DIMM | distributor | DIMM | 168 | 0°C | 70°C | 166 K |
| EBS52EC8APFA-7A | 512M; 133MHz unbuffered SDRAM DIMM | distributor | DIMM | 168 | 0°C | 70°C | 166 K |
| EC8FS6 | 600 V, diode | distributor | SM | 2 | -40°C | 150°C | 30 K |
| R3130N30EC8-TR | Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Standard output delay time 240ms. Output type CMOS. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
| R3131N30EC8-TR | Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Standard output delay time 240ms. Output type CMOS. Detection mode H series output. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
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