| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MB84VD2218XEE-90-PBS | Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM | Fujitsu-Microelectronis | plastic BGA | 73 | -25°C | 85°C | 1 M |
| MB84VD2219XEE-90-PBS | Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM | Fujitsu-Microelectronis | plastic BGA | 73 | -25°C | 85°C | 1 M |
| MB84VD2228XEE-90-PBS | Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 8M(x8/x16) static RAM | Fujitsu-Microelectronis | plastic FBGA | 71 | -25°C | 85°C | 1 M |
| MB84VD2229XEE-90-PBS | Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 8M(x8/x16) static RAM | Fujitsu-Microelectronis | plastic FBGA | 71 | -25°C | 85°C | 1 M |
| MB84VD23280EE-90-PBS | Stacked MCP (multi-chip package) flash memory & SRAM 64M(x8/x16) flash memory & 8M(x8/x16) static RAM | Fujitsu-Microelectronis | plastic FBGA | 101 | -25°C | 85°C | 771 K |
| S-80750AL-EE-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80750AL-EE-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80750AL-EE-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80750SL-EE-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 5 | -30°C | 80°C | 2 M |
| S-80750SL-EE-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 5 | -30°C | 80°C | 2 M |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
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