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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BF1005Silicon N-channel MOSFET tetrodeInfineon-formely-Siemens-4--51 K
BF1005SSilicon N-channel MOSFET tetrodeInfineon-formely-Siemens-4--52 K
F1005Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-4-65°C150°C37 K
MURF1005CT10A, 50V ultra fast recovery rectifierdistributor----121 K
PTF1005235 watts, 1.0 GHz GOLDMOS field effect transistorEricsson-Microelectronics202353--498 K
PTF1005312 watts, 2.0 GHz GOLDMOS field effect transistorEricsson-Microelectronics202443--81 K
UF10051AMP ultra fast switching rectifierdistributor-2-65°C150°C759 K
UF1005600V; 1.0A ultra-fast rectifier; high current capability and high speed switchingdistributor-2-65°C150°C62 K
UF1005600V, 1.0A ultra fast rectifierdistributor-2-55°C150°C35 K
UF1005M500V, 1.0A ultra fast rectifierdistributor-2-55°C125°C35 K
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