| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1007 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| MRF10070 | Microwave pulse power transistor | Motorola | - | 3 | - | - | 97 K |
| UF1007 | 1AMP ultra fast switching rectifier | distributor | - | 2 | -65°C | 150°C | 759 K |
| UF1007 | 1000V; 1.0A ultra-fast rectifier; high current capability and high speed switching | distributor | - | 2 | -65°C | 150°C | 62 K |
| UF1007 | 1000V, 1.0A ultra fast rectifier | distributor | - | 2 | -55°C | 150°C | 35 K |
| UF1007M | 1000V, 1.0A ultra fast rectifier | distributor | - | 2 | -55°C | 125°C | 35 K |
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