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F1008

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F1008Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-4-65°C150°C38 K
UF1008Ultrafast switching rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 10.0 A.distributor-2-50°C150°C60 K
UF1008Reverse voltage: 800.00V; 10A ultrafast glass passivated rectifierdistributor-2-65°C150°C44 K
UF1008Reverse voltage: 800.00V; 10A ultrafast glass passivated rectifierdistributor-2-65°C150°C44 K
UF1008CTReverse voltage: 50.00V; 10A ultrafast glass passivated rectifierdistributor-3-65°C150°C48 K
UF1008FUltrafast switching rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 10.0 A.distributor-3-50°C150°C59 K
UF1008FReverse voltage: 800.00V; 10A isolated ultrafast glass passivated rectifierdistributor-2-65°C150°C44 K
UF1008FReverse voltage: 800.00V; 10A isolated ultrafast glass passivated rectifierdistributor-2-65°C150°C44 K
UF1008FCTReverse voltage: 800.00V; 10A isolated ultrafast glass passivated rectifierdistributor-3-65°C150°C46 K
UF1008FCTReverse voltage: 800.00V; 10A isolated ultrafast glass passivated rectifierdistributor-3-65°C150°C46 K
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