Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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F1012 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
F1014 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 38 K |
F1015 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
F1016 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 41 K |
F1018 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 8 | -65°C | 150°C | 38 K |
MF1018S-1 | SAW filter for digital mobile telephone | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 6 | -20°C | 75°C | 146 K |
MF1018S-2 | SAW filter for digital mobile telephone | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 6 | -20°C | 75°C | 144 K |
MF1018S-3 | SAW filter for digital mobile telephone | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 6 | -20°C | 75°C | 161 K |
MF1018S-4 | SAW filter for digital mobile telephone | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 6 | -20°C | 75°C | 137 K |
MF1018V-4 | Filter for the transmitting RF circuit | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | - | -20°C | 70°C | 74 K |
[1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
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