Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF1010E | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | - | 3 | -55°C | 175°C | 195 K |
IRF1010EL | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | - | 3 | -55°C | 175°C | 123 K |
IRF1010ES | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 123 K |
IRF1010N | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | - | 3 | -55°C | 175°C | 211 K |
IRF1010NL | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | - | 3 | -55°C | 175°C | 146 K |
IRF1010NS | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 146 K |
MF1010S-1 | Filter for AMPS mobile telephones | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 6 | -20°C | 75°C | 133 K |
PTF10100 | 165 watts, 860-900 MHz LDMOS field effect transistor | Ericsson-Microelectronics | 20250 | 4 | - | - | 163 K |
PTF10107 | 5 watts, 2.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20244 | 3 | - | - | 83 K |
UF1010 | Ultrafast switching rectifier. Peak reverse voltage 1000 V. Average forward current 1.0 A. | distributor | - | 2 | -55°C | 150°C | 54 K |
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