| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1015 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| MRF10150 | 150 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 139 K |
| MRF10150 | Microwave pulse power transistor | Motorola | - | 3 | - | - | 90 K |
| MRF1015MA | Microwave pulse power transistor | Motorola | - | 4 | - | - | 110 K |
| MRF1015MB | Microwave pulse power transistor | Motorola | - | 4 | - | - | 110 K |
| MURF1015CT | 10A, 150A ultra fast recovery rectifier | distributor | - | - | - | - | 121 K |
| MURF1015CT | 10A, 150A ultra fast recovery rectifier | distributor | - | - | - | - | 121 K |
| PTF10153 | 60 watts, 1.8-2.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20248 | 2 | - | - | 108 K |
| PTF10154 | 85 watts, 1.93-1.99 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20248 | 2 | - | - | 256 K |
| TRF1015DB | RECEIVER FRONT-END FOR 900 MHZ CELLULAR AND DIGITAL CORDLESS | Texas-Instruments | DB | 20 | - | - | 292 K |
| TRF1015IDB | RECEIVER FRONT-END FOR 900 MHZ CELLULAR AND DIGITAL CORDLESS | Texas-Instruments | DB | 20 | - | - | 292 K |
| 1 [2] |
|---|
