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F1019

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F1019Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-4-65°C150°C38 K
PTF1019312 watts, 860-960 MHz GOLDMOS field effect transistorEricsson-Microelectronics202593--331 K
PTF10195125 watts, 869-894 MHz GOLDMOS field effect transistorEricsson-Microelectronics202483--328 K
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