| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1020 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 40 K |
| MBRF1020 | 10A, 20V ultra fast recovery rectifier | distributor | - | - | - | - | 99 K |
| MBRF1020CT | 10A, 20V ultra fast recovery rectifier | distributor | - | - | - | - | 390 K |
| MURF1020CT | 10A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 121 K |
| PTF102027 | 40 watts, 925-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20222 | 3 | - | - | 207 K |
| PTF102028 | 18 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20251 | 3 | - | - | 219 K |
| RD38F1020C0ZBL0 | 32-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family, 70ns | Intel-Corporation | BGA | 66 | -25°C | 85°C | 1 M |
| SRF1020 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A. | distributor | - | 2 | -65°C | 150°C | 183 K |
| SRF1020 | Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A. | distributor | - | 3 | -65°C | 125°C | 170 K |
| SRF1020A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A. | distributor | - | 3 | -65°C | 125°C | 170 K |
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