| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1040 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 8 | -65°C | 150°C | 32 K |
| MF1043S-1 | SAW filter for GSM mobile telephone | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 6 | -20°C | 75°C | 144 K |
| SF104 | Super fast rectifier. Max recurrent peak reverse voltage Vrrm = 200 V. Max average forward rectified current I(av) = 1.0 A | distributor | - | 2 | -65°C | 125°C | 151 K |
| SF104 | 200 V, 1 A, Super fast recovery rectifier | distributor | DO | 2 | -55°C | 150°C | 174 K |
| SMF104 | Surface mount fast recovery rectifier. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 1.0 A. | distributor | - | - | -65°C | 175°C | 151 K |
| SMF104A | Surface mount fast recovery rectifier. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 1.0 A. | distributor | - | - | -65°C | 175°C | 156 K |
| SRF1040 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 40 V. Max average forward rectified current 10.0 A. | distributor | - | 2 | -65°C | 150°C | 183 K |
| SRF1040A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 10.0 A. | distributor | - | 3 | -65°C | 125°C | 170 K |
| UF104 | Ultrafast switching rectifier. Peak reverse voltage 400 V. Average forward current 1.0 A. | distributor | - | 2 | -55°C | 150°C | 54 K |
| UF104G | Ultrafast switching rectifier. Peak reverse voltage 400 V. Average forward current 1.0 A. | distributor | - | 2 | -55°C | 150°C | 56 K |
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