| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1060 | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 38 K |
| F1063 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 32 K |
| F1065 | 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 36 K |
| F1066 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 8 | -65°C | 150°C | 39 K |
| F1069 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 36 K |
| MBRF1060 | Schottky Rectifier | General-Semiconductor | - | - | - | - | 105 K |
| MF1069S-1 | Filter for the RF circuit | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | - | -20°C | 70°C | 147 K |
| RF106 | Power amplifier | distributor | TSSOP | 20 | -10°C | 70°C | 64 K |
| SF106 | 400 V, 1 A, Super fast recovery rectifier | distributor | DO | 2 | -55°C | 150°C | 174 K |
| UF106 | Ultrafast switching rectifier. Peak reverse voltage 600 V. Average forward current 1.0 A. | distributor | - | 2 | -55°C | 150°C | 54 K |
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