| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF1102 | Dual N-channel dual gate MOS-FETs | Philips-Semiconductors | SOT363 | - | - | - | 120 K |
| BF1102R | Dual N-channel dual gate MOS-FETs | Philips-Semiconductors | SOT363 | - | - | - | 120 K |
| BF1107 | N-channel single gate MOS-FETs | Philips-Semiconductors | SOT23 | - | - | - | 54 K |
| BF1107W | N-channel single gate MOS-FETs | Philips-Semiconductors | SOT323 | - | - | - | 54 K |
| BF1108 | Silicon RF switches | Philips-Semiconductors | SOT143 | - | - | - | 61 K |
| BF1108R | Silicon RF switches | Philips-Semiconductors | SOT143 | - | - | - | 61 K |
| IRFF110 | 3.5A, 100V, 0.600 Ohm , N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 328 K |
| RF110 | Power amplifier | distributor | TSSOP | 20 | -10°C | 70°C | 78 K |
| UF110 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | - | - | - | - | 91 K |
| UF110SM | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | - | - | - | - | 92 K |
| [1] 2 [3] [4] |
|---|
