| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DSF11060SG56 | 5600V fast recovery diode | distributor | - | - | - | - | 48 K |
| DSF11060SG58 | 6800V fast recovery diode | distributor | - | - | - | - | 48 K |
| DSF11060SG60 | 6000V fast recovery diode | distributor | - | - | - | - | 48 K |
| F1107 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 39 K |
| F1108 | 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 41 K |
| IRF1104 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A. | International-Rectifier | - | 3 | -55°C | 175°C | 101 K |
| MF1102-1 | SAW filter for IF filter of PHS hand held | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 12 | -20°C | 75°C | 47 K |
| MF1103-1 | Filter for IF filter of PHS hand held | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 12 | - | - | 50 K |
| MF1105-1 | Filter for the IF circuit of GSM hand held | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | - | -20°C | 70°C | 25 K |
| SF110 | 1000V switchmode power rectifier | distributor | - | 2 | -65°C | 150°C | 141 K |
| [1] [2] 3 [4] |
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