| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1116 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 42 K |
| MF1117V-2 | Filter for digital mobile telephone | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 6 | -20°C | 75°C | 36 K |
| MF1118V-2 | Filter for the RF circuit mobile communications | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | - | -20°C | 70°C | 36 K |
| MSP430F1111A
| MIXED SIGNAL MICROCONTROLLER | Texas-Instruments | - | | - | - | 653 K |
| MSP430F1111AIDW
| MIXED SIGNAL MICROCONTROLLER | Texas-Instruments | - | | - | - | 653 K |
| MSP430F1111AIPW
| MIXED SIGNAL MICROCONTROLLER | Texas-Instruments | - | | - | - | 653 K |
| 1 |
|---|
