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F1210

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F121010 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-4-65°C150°C37 K
QRF1210T301200V, 100A fast recovery common anode diodedistributor----110 K
TEF12103 Watt, input voltage range:9-18V, output voltage 3.3V (700mA) DC/DC converterdistributorDIP24-25°C75°C53 K
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