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F1410

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F1410120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-6-65°C150°C36 K
QRF1410T301400V, 100A fast recovery common anode diodedistributor----113 K
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