| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ATF1516ASL-25QHI208 | High performance EE-based CPDL, 70 MHz | ATMEL-Corporation | plastic RQFP | 208 | -40°C | 85°C | 266 K |
| F1516 | 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 37 K |
| K4F151611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 528 K |
| K4F151611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung-Electronic | - | 50 | 0°C | 70°C | 528 K |
| K4F151611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung-Electronic | - | 44 | 0°C | 70°C | 528 K |
| K4F151612D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 528 K |
| K4F151612D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung-Electronic | - | 44 | 0°C | 70°C | 528 K |
| K4F151612D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung-Electronic | - | 50 | 0°C | 70°C | 528 K |
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