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F1535

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F153535 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-4-65°C150°C36 K
MBRF1535CTSchottky RectifierGeneral-Semiconductor----118 K
SRF1535Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 35 V. Max average forward rectified current 15.0 A.distributor-3-65°C150°C181 K
SRF1535ASchottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 35 V. Max average forward rectified current 15.0 A.distributor-3-65°C150°C181 K
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