Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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F1535 | 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 36 K |
MBRF1535CT | Schottky Rectifier | General-Semiconductor | - | - | - | - | 118 K |
SRF1535 | Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 35 V. Max average forward rectified current 15.0 A. | distributor | - | 3 | -65°C | 150°C | 181 K |
SRF1535A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 35 V. Max average forward rectified current 15.0 A. | distributor | - | 3 | -65°C | 150°C | 181 K |
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