| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4F171611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 528 K |
| K4F171611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | - | 50 | 0°C | 70°C | 528 K |
| K4F171611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | - | 44 | 0°C | 70°C | 528 K |
| K4F171612D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 528 K |
| K4F171612D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | - | 50 | 0°C | 70°C | 528 K |
| MRF173 | RF power field effect transistor | Motorola | - | 4 | - | - | 107 K |
| MRF173CQ | RF power field effect transistor | Motorola | - | 4 | - | - | 107 K |
| MRF174 | RF power field effect transistor | Motorola | - | 4 | - | - | 168 K |
| MRF175GU | RF power field effect transistor | Motorola | - | 5 | - | - | 183 K |
| MRF177 | RF power field effect transistor | Motorola | - | 8 | - | - | 186 K |
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