| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4F171611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 528 K |
| K4F171611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | - | 50 | 0°C | 70°C | 528 K |
| K4F171611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | - | 44 | 0°C | 70°C | 528 K |
| K4F171612D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 528 K |
| K4F171612D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | - | 50 | 0°C | 70°C | 528 K |
| K4F171612D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | - | 44 | 0°C | 70°C | 528 K |
| KF171 | 100MHz Band Paging System | Korea-Electronics-Co--Ltd- | - | - | - | - | 229 K |
| KF171S | 100MHz Band Paging System | Korea-Electronics-Co--Ltd- | - | - | - | - | 229 K |
| MRF171A | 45 W, 150 MHz, MOSFET broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 225 K |
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