| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F2001 | 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 37 K |
| FUF2001 | 50 V, 2 A glass passivated ultrafast recovery rectifier | distributor | - | 2 | -65°C | 150°C | 39 K |
| HAF2001 | Power termal MOSFET | distributor | - | - | - | - | 54 K |
| UF2001 | 50V; 2.0A ultra-fast rectifier; ultra fast switching for high efficiency | distributor | - | 2 | -65°C | 150°C | 62 K |
| UF2001 | 50V, 2.0A ultra fast rectifier | distributor | - | 2 | -55°C | 125°C | 34 K |
| UF2001M | 1000V, 2.0A ultra fast rectifier | distributor | - | 2 | -55°C | 125°C | 35 K |
| UF2001M | 1000V, 2.0A ultra fast rectifier | distributor | - | 2 | -55°C | 125°C | 35 K |
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