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F2003

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F20035 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-4-65°C150°C37 K
KF2003-GC10ACompact medium speed thick film thermal printhead (8 dot/mm)ROHM-305°C45°C171 K
KF2003-GD10ACompact medium speed thick film thermal printhead (8 dot/mm)ROHM-305°C45°C177 K
KF2003-GE10ACompact low speed thick film thermal printhead (8 dot/mm)ROHM-305°C45°C169 K
KF2003-GH10ACompact low speed thick film thermal printhead (8 dot/mm)ROHM-185°C45°C165 K
KF2003-GK10ACompact low speed thick film thermal printhead (8 dot/mm)ROHM-425°C45°C164 K
MRF20030RF power bipolar transistorMotorola-3--111 K
NF2003-VA10AHigh speed thermal printhead (8 dots/mm)ROHM-255°C45°C191 K
UF2003300V, 2.0A ultra fast rectifierdistributor-2-55°C125°C34 K
UF2003M200V, 2.0A ultra fast rectifierdistributor-2-55°C125°C35 K
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