| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ERF212B1 | Single Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 39 K |
| RF212-11 | Image-reject front end for tri-band GSM applications | distributor | ETSSOP | 20 | -30°C | 85°C | 89 K |
| RF212-21 | Image-reject front end for tri-band GSM applications | distributor | ETSSOP | 20 | -30°C | 85°C | 89 K |
| RF2125P | High power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 51 K |
| RF2125PPCBA | High power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 51 K |
| RF2126PCBA | High power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 57 K |
| RF2127 | Medium power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 63 K |
| RF2127PCBA | Medium power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 63 K |
| RF2128P | Medium power linear amplifier | RF-Micro-Devices-RFMD | PSOP | 8 | -40°C | 85°C | 134 K |
| RF2128PPCBA | Medium power linear amplifier | RF-Micro-Devices-RFMD | PSOP | 8 | -40°C | 85°C | 134 K |
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