Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF231 | 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 69 K |
RF2310 | Wideband general purpose amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 189 K |
RF2310PCBA | Wideband general purpose amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 189 K |
RF2311 | General purpose amplifier | RF-Micro-Devices-RFMD | SOP | 8 | -40°C | 85°C | 61 K |
RF2311PCBA | General purpose amplifier | RF-Micro-Devices-RFMD | SOP | 8 | -40°C | 85°C | 61 K |
RF2312 | Linear general purpose amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 274 K |
RF2312PCBA | Linear general purpose amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 274 K |
RF2314 | General purpose low noise amplifier | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 85°C | 114 K |
RF2314PCBA | General purpose low noise amplifier | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 85°C | 114 K |
RF2317 | Linear catv amplifier | RF-Micro-Devices-RFMD | CJ2BATO | 16 | -40°C | 85°C | 151 K |
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