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F247

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BF247BN-channel silicon junction field-effect transistors for VHF and UHF amplifiers, mixers and general purpose switchingPhilips-Semiconductors-3-65°C150°C37 K
BF247CN-channel silicon junction field-effect transistors for VHF and UHF amplifiers, mixers and general purpose switchingPhilips-Semiconductors-3-65°C150°C37 K
IRF24714A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETsIntersil-Corporation----70 K
LF247WIDE BANDWIDTH QUAD J-FET OPERATIONAL AMPLIFIERSSGS-Thomson-Microelectronics----120 K
MRF247NPN silicon RF power transistorMotorola-4--151 K
RF24722.4GHz low noise amplifier with enableRF-Micro-Devices-RFMDSOT5-40°C85°C183 K
RF2472PCBA-4102.4GHz low noise amplifier with enableRF-Micro-Devices-RFMDSOT5-40°C85°C183 K
RF2472PCBA-4112.4GHz low noise amplifier with enableRF-Micro-Devices-RFMDSOT5-40°C85°C183 K
RF2475Dual-band low noise amplifier with frequency doublerRF-Micro-Devices-RFMDLCC28-30°C85°C547 K
RF2475PCBADual-band low noise amplifier with frequency doublerRF-Micro-Devices-RFMDLCC28-30°C85°C547 K
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