Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BF247B | N-channel silicon junction field-effect transistors for VHF and UHF amplifiers, mixers and general purpose switching | Philips-Semiconductors | - | 3 | -65°C | 150°C | 37 K |
BF247C | N-channel silicon junction field-effect transistors for VHF and UHF amplifiers, mixers and general purpose switching | Philips-Semiconductors | - | 3 | -65°C | 150°C | 37 K |
IRF247 | 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 70 K |
LF247 | WIDE BANDWIDTH QUAD J-FET OPERATIONAL AMPLIFIERS | SGS-Thomson-Microelectronics | - | - | - | - | 120 K |
MRF247 | NPN silicon RF power transistor | Motorola | - | 4 | - | - | 151 K |
RF2472 | 2.4GHz low noise amplifier with enable | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 85°C | 183 K |
RF2472PCBA-410 | 2.4GHz low noise amplifier with enable | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 85°C | 183 K |
RF2472PCBA-411 | 2.4GHz low noise amplifier with enable | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 85°C | 183 K |
RF2475 | Dual-band low noise amplifier with frequency doubler | RF-Micro-Devices-RFMD | LCC | 28 | -30°C | 85°C | 547 K |
RF2475PCBA | Dual-band low noise amplifier with frequency doubler | RF-Micro-Devices-RFMD | LCC | 28 | -30°C | 85°C | 547 K |
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