Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K9F2816Q0C-DCB0 | 8M x 16 bit NAND flash memory, 1.7 - 1.95V | Samsung-Electronic | TBGA | 63 | 0°C | 70°C | 583 K |
K9F2816Q0C-DIB0 | 8M x 16 bit NAND flash memory, 1.7 - 1.95V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 583 K |
K9F2816U0C-DCB0 | 8M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | 0°C | 70°C | 583 K |
K9F2816U0C-DIB0 | 8M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 583 K |
K9F2816U0C-YCB0 | 8M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TSOP I | 48 | 0°C | 70°C | 583 K |
K9F2816U0C-YIB0 | 8M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TSOP I | 48 | -40°C | 85°C | 583 K |
UF28100M | 100-500 MHz, 100 W, 28 V, RF MOSFET power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 188 K |
UF28100V | 100-500 MHz, 100 W, 28 V, RF MOSFET power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 214 K |
UF2810P | 100-500 MHz, 10 W, 28 V, RF MOSFET power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 148 K |
UF28150J | 100-500 MHz, 150 W, 28 V, MOSFET power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 171 K |
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