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F360

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ARF360S333300 V, 290 A, 5 kA fast recovery diodedistributor-2-30°C125°C106 K
IF3601N-Channel silicon junction field-effect transistordistributor-3--91 K
IF3602Dual N-Channel silicon junction field-effect transistordistributor-8--92 K
IRF360HEXFET transistor thru-hole. VDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25AInternational-Rectifier-3-55°C150°C139 K
IRF360HEXFET transistor thru-hole. VDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25AInternational-Rectifier-3-55°C150°C139 K
IRF360HEXFET transistor thru-hole. VDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25AInternational-Rectifier-3-55°C150°C139 K
UF360Ultra Fast Rectifier (less than 100ns)Microsemi-Corporation----95 K
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