| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF3808 | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 140A | International-Rectifier | - | 3 | -55°C | 175°C | 131 K |
| IRF3808L | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 106A | International-Rectifier | - | 3 | -55°C | 175°C | 161 K |
| IRF3808S | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 106A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 161 K |
| LMF380CIJ | Triple One-Third Octave Switched-Capacitor Active Filter | distributor | - | - | - | - | 232 K |
| LMF380CIJ | Triple One-Third Octave Switched-Capacitor Active Filter | distributor | - | - | - | - | 232 K |
| LMF380CIN | Triple One-Third Octave Switched-Capacitor Active Filter | distributor | - | - | - | - | 232 K |
| S3F380D | 16/32-bit RISC microcontroller, MTP version | Samsung-Electronic | - | 42 | -20°C | 85°C | 148 K |
| UF380 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | - | - | - | - | 95 K |
| UF380 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | - | - | - | - | 95 K |
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