Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF430 | 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
IRF430 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A | International-Rectifier | - | 3 | -55°C | 150°C | 146 K |
IRF430 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 21 K |
IRFF430 | 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 325 K |
KF430B | 400MHz-500MHz Band(150ohm) | Korea-Electronics-Co--Ltd- | - | - | - | - | 177 K |
KF430BS | 400MHz-500MHz Band(150ohm) | Korea-Electronics-Co--Ltd- | - | - | - | - | 397 K |
KF430BV | 400MHz-500MHz Band(150ohm) | Korea-Electronics-Co--Ltd- | - | - | - | - | 397 K |
OPF430 | Fiber optic high speed PIN photodiode | distributor | - | 3 | -55°C | 125°C | 266 K |
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