Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BF510 | N-channel silicon field-effect transistors | Philips-Semiconductors | SOT23 | - | - | - | 37 K |
IRF510 | N-channel power MOSFET, 100V, 5.6A | Harris-Semiconductor | - | 3 | -55°C | 175°C | 68 K |
IRF510 | 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 70 K |
IRF510 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A | International-Rectifier | - | 3 | -55°C | 175°C | 175 K |
IRF510S | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A | International-Rectifier | - | 3 | -55°C | 175°C | 178 K |
KF510B | 400MHz-500MHz Band(150ohm) | Korea-Electronics-Co--Ltd- | - | - | - | - | 177 K |
KF510BS | 400MHz-500MHz Band(150ohm) | Korea-Electronics-Co--Ltd- | - | - | - | - | 397 K |
OPF510 | 200 kbps Fiber optic receiver | distributor | - | 3 | -40°C | 85°C | 720 K |
SF510 | 1000V switchmode power rectifier | distributor | - | 2 | -65°C | 150°C | 129 K |
UF510 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | - | - | - | - | 94 K |
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