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F580

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF5800HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.085 OhmInternational-RectifierTSOP6-55°C150°C98 K
IRF5801HEXFET power MOSFET. VDSS = 200V, RDS(on) = 2.2 Ohm, ID = 0.6AInternational-RectifierTSOP6-55°C150°C120 K
IRF5803HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5VInternational-RectifierTSOP6-55°C150°C109 K
IRF5803D2FETKY MOSFET & schottky diode. VDSS = -40V, RDS(on) = 112 mOhm, schottky Vf = 0.51VInternational-RectifierSO8-55°C150°C127 K
IRF5804HEXFET power MOSFET. VDSS = -40V, RDS(on) = 198 mOhm, ID = -2.5A @ VGS = -10V, RDS(on) = 334 mOhm, ID = -2.0A @ VGS = -4.5VInternational-RectifierTSOP6-55°C150°C99 K
LF580Dual,continuous,analog highpass filter, 5V DCGennum-CorporationChip--10°C50°C81 K
LF580Dual,continuous,analog highpass filter, 5V DCGennum-CorporationPLID8-10°C50°C81 K
LF580Dual,continuous,analog highpass filter, 5V DCGennum-CorporationMICROpac8-10°C50°C81 K
TLHF5800Standard Orange(605nm) LEDVishay-Telefunken----75 K
UF580Ultra Fast Rectifier (less than 100ns)Microsemi-Corporation----94 K
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