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F61

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF6103.3A, 200V, 1.500 Ohm, N-Channel Power MOSFETIntersil-Corporation----55 K
IRF6142.0A, 250V, 2.0 Ohm, N-Channel Power MOSFETIntersil-Corporation----45 K
MCM69F618CTQ1064K x 18 bit flow-through burstRAM synchronous fast static RAMMotorolaTQFP1000°C70°C203 K
MCM69F618CTQ10R64K x 18 bit flow-through burstRAM synchronous fast static RAMMotorolaTQFP1000°C70°C203 K
MCM69F618CTQ1264K x 18 bit flow-through burstRAM synchronous fast static RAMMotorolaTQFP1000°C70°C203 K
MCM69F618CTQ8.564K x 18 bit flow-through burstRAM synchronous fast static RAMMotorolaTQFP1000°C70°C203 K
MCM69F618CTQ8.5R64K x 18 bit flow-through burstRAM synchronous fast static RAMMotorolaTQFP1000°C70°C203 K
MCM69F618CTQ964K x 18 bit flow-through burstRAM synchronous fast static RAMMotorolaTQFP1000°C70°C203 K
MF6128M-02AJFlash driveMitsubishi-Electric-Corporation-Semiconductor-Group-440°C60°C145 K
MJF6107Power transistorMotorola-3-65°C150°C217 K
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