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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CEBF630N-channel enhancement mode field effect transistorChino-Excel-Technology-Corporation-3-65°C150°C506 K
CEDF630N-channel enhancement mode field effect transistorChino-Excel-Technology-Corporation-3-65°C175°C502 K
CEFF630N-channel enhancement mode field effect transistorChino-Excel-Technology-Corporation-3-55°C150°C490 K
CEPF630N-channel enhancement mode field effect transistorChino-Excel-Technology-Corporation-3-65°C150°C506 K
CEUF630N-channel enhancement mode field effect transistorChino-Excel-Technology-Corporation-3-65°C175°C502 K
IRF630N-channel TrenchMOS transistorPhilips-SemiconductorsSOT78---97 K
IRF630N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFETSGS-Thomson-Microelectronics----104 K
IRF630FPN-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFETSGS-Thomson-Microelectronics----104 K
IRF630SN-channel TrenchMOS transistorPhilips-SemiconductorsSOT404---97 K
IRF630SN-CHANNEL 200V - 0.35 OHM - 9A - D2PAK MESH OVERLAY MOSFETSGS-Thomson-Microelectronics----85 K
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