Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CEBF630 | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 506 K |
CEDF630 | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 175°C | 502 K |
CEFF630 | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -55°C | 150°C | 490 K |
CEPF630 | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 506 K |
CEUF630 | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 175°C | 502 K |
IRF630 | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 97 K |
IRF630 | N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 104 K |
IRF630FP | N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 104 K |
IRF630S | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT404 | - | - | - | 97 K |
IRF630S | N-CHANNEL 200V - 0.35 OHM - 9A - D2PAK MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
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