| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF640 | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | -- |
| IRF640 | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 150°C | 178 K |
| IRF640B | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 916 K |
| IRF640L | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 228 K |
| IRF640L | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 228 K |
| IRF640STRL | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 228 K |
| K4F640811B-JC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
| K4F640811B-JC-50 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
| K4F640811B-JC-60 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
| K4F640811B-TC-60 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
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