Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4F641612B-TL50 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 844 K |
K4F641612B-TL60 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 844 K |
MRF641 | NPN silicon RF power transistor | Motorola | - | 6 | - | - | 103 K |
MRF6414 | NPN silicon RF power transistor | Motorola | - | 6 | - | - | 108 K |
MRF6414 | NPN silicon RF power transistor | Motorola | - | 6 | - | - | 108 K |
MRF6414 PHOTOMASTER | NPN silicon RF power transistor | Motorola | - | 6 | - | - | 70 K |
N74F641D | Transceivers | Philips-Semiconductors | SOT163 | - | - | - | 92 K |
N74F641D | Transceivers | Philips-Semiconductors | SOT163 | - | - | - | 92 K |
N74F641N | Transceivers | Philips-Semiconductors | SOT146 | - | - | - | 92 K |
NX25F641C-3T | 3 V, 64M-bit flash memory with 4-pin SPI interface | distributor | TSOP | 32 | 0°C | 70°C | 375 K |
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