Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CF750 | GaAs MMIC | Infineon-formely-Siemens | - | 4 | - | - | 51 K |
IRF7501 | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.135 Ohm | International-Rectifier | Micro8 | 8 | -55°C | 150°C | 143 K |
IRF7503 | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.135 Ohm | International-Rectifier | Micro8 | 8 | -55°C | 150°C | 114 K |
IRF7504 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.27 Ohm | International-Rectifier | Micro8 | 8 | -55°C | 150°C | 115 K |
IRF7506 | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.27 Ohm | International-Rectifier | Micro8 | 8 | -55°C | 150°C | 103 K |
IRF7507 | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.135 Ohm @ N-Ch. VDSS = -20V, RDS (on) = 0.27 Ohm @ P-Ch. | International-Rectifier | Micro8 | 8 | -55°C | 150°C | 216 K |
IRF7509 | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.11 Ohm @ N-Ch. VDSS = -30V, RDS(on) = 0.20 Ohm @ P-Ch. | International-Rectifier | Micro8 | 8 | -55°C | 150°C | 217 K |
MBRF750 | Schottky Rectifier | General-Semiconductor | - | - | - | - | 114 K |
SRF750 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 50 V. Max average forward rectified current 7.5 A. | distributor | - | 2 | -65°C | 150°C | 178 K |
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