Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BF820 | NPN high-voltage transistor. | Philips-Semiconductors | SOT23 | 3 | -65°C | 150°C | 49 K |
BF820W | NPN high-voltage transistor. | Philips-Semiconductors | SOT323 | 3 | -65°C | 150°C | 61 K |
BF822 | NPN high-voltage transistor. | Philips-Semiconductors | SOT23 | 3 | -65°C | 150°C | 49 K |
BF822W | NPN high-voltage transistor. | Philips-Semiconductors | SOT323 | 3 | -65°C | 150°C | 61 K |
BF822W | NPN high-voltage transistor. | Philips-Semiconductors | SOT323 | 3 | -65°C | 150°C | 61 K |
BF822W | NPN high-voltage transistor. | Philips-Semiconductors | SOT323 | 3 | -65°C | 150°C | 61 K |
IRF820B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 858 K |
MPF820 | N-channel JFET, 25V | Motorola | - | 3 | -65°C | 150°C | 113 K |
MURF820 | 8.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 103 K |
SRF820 | Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 8.0 A. | distributor | - | 2 | -65°C | 125°C | 150 K |
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