| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF820 | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
| IRF820 | N-channel enhancement mode power MOS transistor, 500V, 3.0A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 169 K |
| IRF820A | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 100 K |
| IRF820AL | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 133 K |
| IRF820AS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 133 K |
| IRF820FI | N-channel enhancement mode power MOS transistor, 500V, 2.2A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 169 K |
| IRF820S | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 172 K |
| IRF822 | N-channel enhancement mode power MOS transistor, 500V, 2.8A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 169 K |
| IRF822FI | N-channel enhancement mode power MOS transistor, 500V, 1.9A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 169 K |
| SF82R | Super fast rectifier. Case negative Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 8.0 A. | distributor | - | 3 | -65°C | 150°C | 165 K |
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