| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF9230 | -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 72 K |
| IRF9230 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -200V, RDS(on) = 0.80 Ohm, ID = -6.5A | International-Rectifier | - | 3 | -55°C | 150°C | 149 K |
| IRF9230 | 200V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 22 K |
| IRF9231 | -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 72 K |
| IRF9232 | -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 72 K |
| IRF9233 | -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 72 K |
| IRFF9230 | -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 328 K |
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