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FB8

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M29FB800FPCMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupSOP44-40°C85°C151 K
M5M29FB800RV-10CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C151 K
M5M29FB800RV-12CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C151 K
M5M29FB800RV-80CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C151 K
M5M29FB800VP-10CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-40°C85°C151 K
M5M29FB800VP-12CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-40°C85°C151 K
M5M29FB800VP-80CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-40°C85°C151 K
MCM72FB8ML7.5R256K and 72 bit burstRAM multichip moduleMotorolaPBGA2090°C70°C252 K
MCM72FB8ML8256K and 72 bit burstRAM multichip moduleMotorolaPBGA2090°C70°C252 K
MCM72FB8ML8R256K and 72 bit burstRAM multichip moduleMotorolaPBGA2090°C70°C252 K
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