| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFIB5N65A | HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 5.1 A | International-Rectifier | - | 3 | -55°C | 150°C | 103 K |
| IRFIB6N60A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A | International-Rectifier | - | 3 | -55°C | 150°C | 149 K |
| IRFIB7N50A | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 6.6 A | International-Rectifier | - | 3 | -55°C | 150°C | 96 K |
| IRFIBC20G | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 1.7 A | International-Rectifier | - | 3 | -55°C | 150°C | 167 K |
| IRFIBC30G | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 2.5 A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
| IRFIBC40G | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 3.5 A | International-Rectifier | - | 3 | -55°C | 150°C | 170 K |
| IRFIBC40GLC | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 3.5 A | International-Rectifier | - | 3 | -55°C | 150°C | 229 K |
| IRFIBE20G | HEXFET power MOSFET. VDSS = 800V, RDS(on) = 6.5 Ohm, ID = 1.4 A | International-Rectifier | - | 3 | -55°C | 150°C | 168 K |
| IRFIBE30G | HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A | International-Rectifier | - | 3 | -55°C | 150°C | 142 K |
| IRFIBF20G | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.2A | International-Rectifier | - | 3 | -55°C | 150°C | 168 K |
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