Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FK30SM-6 | 30A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 53 K |
MGFK30V4045 | 14.0 - 14.5 GHz 1W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 80 K |
MGFK33V4045 | 14.0-14.5GHz band 2W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 113 K |
MGFK35V2228 | 12.2-12.8GHz band 3W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 96 K |
MGFK35V2732 | 12.7-13.2GHz band 3W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 100 K |
MGFK35V4045 | 14.0-14.5GHz band 3W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 118 K |
MGFK36V4045 | 14.0-14.5GHz band 4W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 91 K |
MGFK374045 | 14.0-14.5GHz band 5W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 119 K |
MGFK38V2228 | 12.2-12.8GHz band 6W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 96 K |
TFK3080D | NPN silicon tripleton power transistor | Vishay-Telefunken | - | 4 | -40°C | 150°C | 463 K |
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