| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 20FL2CZ51A | High efficiency silicon diode stack for switching type power supply applications, converter and chopper applications | Toshiba | - | 3 | -40°C | 150°C | 197 K |
| BFL2805 | 5A EMI filter | distributor | - | 12 | -40°C | 85°C | 168 K |
| BFL2805E | 5A EMI filter | distributor | - | 12 | -55°C | 125°C | 168 K |
| BFL2805H | 5A EMI filter | distributor | - | 12 | -55°C | 125°C | 168 K |
| D1FL20U | Single super fast recovery rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | 1F | - | - | - | 474 K |
| D2FL20U | Single super fast recovery rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | 2F | - | - | - | 449 K |
| M1FL20U | Single super fast recovery rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | M1F | - | - | - | 438 K |
| RFL2N05 | 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 44 K |
| RFL2N06 | 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 44 K |
| RFL2N06L | 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 306 K |
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