Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FP101 | PNP epitaxial planar silicon transistor + composite schottky barrier diode, DC-DC convertor application | SANYO-Electric-Co--Ltd- | 2088A | 7 | - | - | 118 K |
FP102 | PNP epitaxial planar silicon transistor + composite schottky barrier diode, DC-DC convertor application | SANYO-Electric-Co--Ltd- | 2088A | 7 | - | - | 116 K |
FP103 | PNP epitaxial planar silicon transistor + composite schottky barrier diode, DC-DC convertor application | SANYO-Electric-Co--Ltd- | 2088A | 7 | - | - | 119 K |
FP104 | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application | SANYO-Electric-Co--Ltd- | 2088A | 7 | - | - | 131 K |
FP105 | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application | SANYO-Electric-Co--Ltd- | 2088A | 7 | - | - | 123 K |
FP106 | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application | SANYO-Electric-Co--Ltd- | 2088A | 7 | - | - | 121 K |
FP107 | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application | SANYO-Electric-Co--Ltd- | 2088A | 7 | - | - | 112 K |
RFP10N15 | 10.0A, 120V and 150V, 0.300 ohm, N-Channel Power MOSFET FN1445.2 | Intersil-Corporation | - | - | - | - | 40 K |
RFP10P03L | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 133 K |
RFP10P15 | -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 305 K |
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