Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
33C408RTFS25 | 4-megabit (512K x 8-bit) CMOS SRAM | distributor | Flatpack | 32 | -55°C | 125°C | 181 K |
BFS20 | NPN silicon planar VHF transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 45 K |
BFS20 | NPN silicon planar VHF transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 45 K |
EA31FS2-F | 200 V, diode | distributor | TO | 3 | -40°C | 150°C | 32 K |
FS2320-7R | 100W,input voltage range:20-100V, output voltage 24V (4A) AC/DC converter | distributor | SO | 32 | -25°C | 71°C | 147 K |
FS2660-7R | 100W,input voltage range:20-100V, output voltage 48V (2A) AC/DC converter | distributor | SO | 32 | -25°C | 71°C | 147 K |
FS2KM-18A | 2A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -55°C | 150°C | 43 K |
IRFS23N15D | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 139 K |
IRFS23N15D | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 139 K |
IRFS23N20D | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 196 K |
[1] [2] [3] 4 [5] [6] [7] [8] [9] [10] |
---|