| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M5M5V416BWG-10H | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | 0°C | 70°C | 107 K |
| M5M5V416BWG-10HI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
| M5M5V416BWG-10HI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
| M5M5V416BWG-10HW | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 107 K |
| M5M5V416BWG-10L | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | 0°C | 70°C | 107 K |
| M5M5V416BWG-10LI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
| M5M5V416BWG-10LI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
| M5M5V416BWG-10LW | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 107 K |
| MH4S64BBKG-10 | 268435456-bit (4194304-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 144 | 0°C | 70°C | 576 K |
| MH8S64BMG-10 | 536870912-bit (8388608-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 588 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] [10] |
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